Ferromagnetic Ga1ÀxMnxAs produced by ion implantation and pulsed-laser melting
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چکیده
We demonstrate the formation of ferromagnetic Ga12xMnxAs films by Mn ion implantation into GaAs followed by pulsed-laser melting. Irradiation with a single excimer laser pulse results in the epitaxial regrowth of the implanted layer with Mn substitutional fraction up to 80% and effective Curie temperature up to 29 K for samples with a maximum Mn concentration of x'0.03. A remanent magnetization persisting above 85 K has been observed for samples with x'0.10, in which 40% of the Mn resides on substitutional lattice sites. We find that the ferromagnetism in Ga12xMnxAs is rather robust to the presence of structural defects. © 2003 American Institute of Physics. @DOI: 10.1063/1.1555260#
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تاریخ انتشار 2003